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?2012 fairchild semiconductor corporation 1 www.fairchildsemi.com FBA42060 rev. c5 FBA42060 pfc spm? 45 series for single-phase boost pfc march 2014 FBA42060pfc spm ? 45 series for single-phase boost pfc features ul certified no. e209204 (ul1557) 600 v - 20 a single-phase boost pfc with integral gate driver and protection low thermal resistance using ceramic substrate full-wave bridge rectifier and high-performance output diode optimized for 20khz switching frequency built-in ntc thermistor for temperature monitoring isolation rating: 2000 vrms/min. applications single-phase boost pfc converter related source an-9091 - boost pfc inductor design guide an-9072 - motion spm? 45 series mounting guid- ance general description the FBA42060 is an advanced pfc spm ? 45 module providing a fully-featured, high-performance boost pfc (power factor correction) input power stage for con- sumer, medical, and indust rial applications. these mod- ules integrate optimized gate drive of the built-in igbt to minimize emi and losses, while also providing multi- ple on-module protection features including under-volt- age lockout, over-current shutdown, thermal monitoring, and fault reporting. these modules also feature a full- wave rectifier and high-performance output diode for additional space savings and mounting convenience. figure 1. package overview package marking & ordering information device device marking package packing type quantity FBA42060 FBA42060 spmaa-f26 rail 12
?2012 fairchild semiconductor corporation 2 www.fairchildsemi.com FBA42060 rev. c5 FBA42060 pfc spm? 45 series for single-phase boost pfc integrated drive, protectio n and system control functions for igbts: gate drive circuit, over-curr ent protection (ocp), control supply circ uit under-voltage lock-out (uvlo) protection fault signal: corresponding to oc and uv fault built-in ntc thermistor: temperature monitoring input interface: active-high interface, wor ks with 3.3 / 5 v logic, schmitt trigger input pin configuration figure 2. top view v th (1) r th (2) s (3) r (4) p r (5) l (6) p (7) n.c (8) n.c (9) (26) n r (25) n r (24) n r (23) n r (22) n (21) n (20) n.c (19) n.c (18) n.c (17) com (15) com (16) v cc (13) in (14) com (12) n.c (11) v fo (10) c sc
?2012 fairchild semiconductor corporation 3 www.fairchildsemi.com FBA42060 rev. c5 FBA42060 pfc spm? 45 series for single-phase boost pfc pin descriptions internal equivalent circuit figure 3. internal block diagram pin number pin name pin description 1v th thermistor bias voltage 2r th series resistor for the use of thermistor 3 s ac input for s-phase 4 r ac input for r-phase 5p r positive dc-link of rectifier 6 l inductor connection 7 p positive dc-link input 8, 9 n.c - 10 c oc signal input for over-current detection 11 v fo fault output 12 n.c - 13 in pwm input for igbt drive 14 com common supply ground 15 com common supply ground 16 v cc common supply voltage of ic for igbt drive 17 com common supply ground 18 ~ 20 n.c - 21, 22 n negative dc-link input 23 ~ 26 n r negative dc-link of rectifier diode csc vfoin com vcc out (1)v th (2)r th (10)c sc (11)v fo (13)in (14)(15)(17)com (16)vcc (7)p (3)s (4)r (23)(24)(25)(26)n r ntc thermistor (5)p r (6)l (21)(22)n
?2012 fairchild semiconductor corporation 4 www.fairchildsemi.com FBA42060 rev. c5 FBA42060 pfc spm? 45 series for single-phase boost pfc absolute maximum ratings converter part control part total system thermal resistance symbol parameter conditions rating unit v i input supply voltage applied between r - s 276 v rms v i(surge) input supply voltage (surge) applied between r - s 500 v v pn output voltage applied between p r - n r 450 v v pn(surge) output supply voltage (surge) applied between p r - n r 500 v v ces collector - emitter voltage 600 v v rrm repetitive peak reverse voltage 600 v i c each igbt collector current t c = 25c, v cc = 15 v 20 a i cp each igbt collector current (peak) t c = 25c, under 1 ms pulse width 30 a i fsm peak forward surge current single half sine-wave 200 a t j operating junction temperature -40 ~ 150 c symbol parameter conditions rating unit v cc control supply voltage applied between v cc - com 20 v v in input signal voltage applied between in - com -0.3 ~ v cc + 0.3 v v fo fault output supply voltage applied between v fo - com -0.3 ~ v cc + 0.3 v i fo fault output current sink current at v fo pin 1 ma v sc current sensing input voltage applied between c sc - com -0.3 ~ v cc + 0.3 v symbol parameter conditions rating unit t stg storage temperature -40 ~ 125 c v iso isolation voltage 60 hz, sinus oidal, ac 1 minute, connect pins to heat sink plate 2000 v rms symbol parameter condition min. typ. max. unit r th(j-c)q junction to case thermal resistance at chip center igbt - - 2.5 c/w r th(j-c)d frd - - 2.5 c/w r th(j-c)r rectifier - - 2.5 c/w
?2012 fairchild semiconductor corporation 5 www.fairchildsemi.com FBA42060 rev. c5 FBA42060 pfc spm? 45 series for single-phase boost pfc electrical characteristics (t j = 25c, unless otherwise specified.) converter part 1st notes: 1. t on and t off include the propagation delay of the internal drive ic. t c(on) and t c(off) are the switching time of igbt itself under the given gate driving condition internally. for the detailed information, please see figure 4. figure 4. switching time definitions symbol parameter conditions min. typ. max. unit v ce(sat) igbt collector - emitter saturation voltage v cc = 15 v, v in = 5v, i c = 20 a - 2.2 2.7 v v ff frd forward voltage i f = 20 a - 2.1 2.6 v v fr rectifier forward voltage i f = 20 a - 1.1 1.4 v t on switching characteristic v pn = 300 v, v cc = 15 v, i c = 20 a, v in = 0 v ? 5 v, inductive load (1st note 1) - 770 - ns t off - 640 - ns t c(on) - 130 - ns t c(off) -5 0- n s trr -4 0- n s irr -4 . 0- a i ces collector - emitter leakage current v ce = v ces --1m a
?2012 fairchild semiconductor corporation 6 www.fairchildsemi.com FBA42060 rev. c5 FBA42060 pfc spm? 45 series for single-phase boost pfc control part 1st notes: 2. over-current protection is functioning on igbt. 3. t th is the temperature of thermister itself. to know case temperature (t c ), please make the experiment considering your application. . figure 5. r-t curve of the built-in thermistor symbol parameter conditions min. typ. max. unit i qcc quiescent v cc supply current v cc = 15 v, v in = 0v, v cc - com - - 2.65 ma v foh fault output voltage v sc = 0 v, v fo circuit: 4.7 k ? to 5 v pull-up 4.5 - - v v fol v sc = 1 v, v fo circuit: 4.7 k ? to 5 v pull-up - - 0.8 v v sc(ref) over-current protection trip level voltage of c sc pin v cc = 15 v (1st note 2) 0.45 0.50 0.55 v uv ccd supply circuit under- voltage protection detection level 10.5 13.0 v uv ccr reset level 11.0 13.5 v v in(on) on threshold voltage applied between in - com - - 2.6 v v in(off) off threshold voltage 0.8 - - v r th resistance of thermistor t th = 25c (1st note 3) - 47.0 - k ? t th = 100c -2 . 9-k ? 02 55 07 51 0 01 2 5 0 50 100 150 200 min typ max r-t curve resistance r th [k ? ] temperature t th [ o c] 95 100 105 110 115 120 125 1 2 3 4 min typ max resistance r th [k ? ] temperature t th [ o c]
?2012 fairchild semiconductor corporation 7 www.fairchildsemi.com FBA42060 rev. c5 FBA42060 pfc spm? 45 series for single-phase boost pfc recomended oper ating conditions 1st notes: 4. the pfc spm ? product might not make response if input pulse width is less than the recommended value. mechanical characteristics and ratings figure 6. flatness measurement position symbol parameter conditions min. typ. max. unit v i input supply voltage applied between r - s 198 220 242 v rms v pn supply voltage applied between p r - n - 360 400 v i i input current v dc = 360 v, f sw = 20 khz, v cc = 15 v, t c = 90c, t j 150c -2 0-a peak v cc supply voltage for inverter applied between v cc - com 13.5 15.0 16.5 v p win(on) minimum input pulse width (1st note 4) 0.5 - - ? s p win(off) 0.5 - - ? s dv cc /dt supply variation -1 - 1 v/ ? s f pwm pwm input frequency t j 150c - 20 - khz v sen voltage for current sensing applied between n - com (including surge voltage) -4 - 4 v parameter conditions min. typ. max. unit mounting torque mounting screw: m3 recommended 0.7 nm 0.6 0.7 0.8 nm device flatness see figure 6 0 - +120 ? m weight -1 1- g
?2012 fairchild semiconductor corporation 8 www.fairchildsemi.com FBA42060 rev. c5 FBA42060 pfc spm? 45 series for single-phase boost pfc time charts of protective function a1 : control supply voltage rises: after the voltage rises uv ccr , the circuits start to operate when the next input is applied. a2 : normal operation: igbt on and carrying current. a3 : under-voltage detection (uv ccd ). a4 : igbt off in spite of control input condition. a5 : fault output operation starts. a6 : under-voltage reset (uv ccr ). a7 : normal operation: igbt on and carrying current. figure 7. under-voltage protection input signal output current fault output signal control supply voltage reset uv ccr protection circuit state set reset uv ccd a1 a3 a2 a4 a6 a5 a7
?2012 fairchild semiconductor corporation 9 www.fairchildsemi.com FBA42060 rev. c5 FBA42060 pfc spm? 45 series for single-phase boost pfc (with the external shunt resistance and cr connection) c1 : normal operation: igbt on and carrying current. c2 : over-current detection (oc trigger). c3 : hard igbt gate interrupt. c4 : igbt turns off. c5 : fault output timer operation starts. c6 : input low: igbt off state. c7 : input high: igbt on state, but during the ac tive period of fault output the igbt doesnt turn on. c8 : igbt off state figure 8. over current protection internal igbt gate - emitter voltage igbt control input output current sensing voltage of shunt resistance fault output signal sc reference voltage cr circuit time constant delay oc protection circuit state set reset c6 c7 c3 c2 c1 c8 c4 c5
?2012 fairchild semiconductor corporation 10 www.fairchildsemi.com FBA42060 rev. c5 FBA42060 pfc spm? 45 series for single-phase boost pfc recommand circuit for application figure 9. typical a pplication circuit 2nd notes: 1. to avoid malfunction, the wiring of each input should be as short as possible (less than 2 - 3 cm). 2. v fo output is open-drain type. this signal line should be pulled up to the positive si de of the mcu or pfc controller power supply with a resistor that makes i fo up to 1 ma. 3. input signal is active-high type. there is a 5 k ? resistor inside the ic to pull-down each input signal line to gnd. rc coupling circuits is recommanded for the prevention of input signal oscillation. r s c ps time constant should be selected in the range 50 ~ 150 ns ( recommended r s = 100 ? , c ps = 1 nf). 4. to prevent errors of the protection function, the wiring around r f and c sc should be as short as possible. 5. in the over-current protection circuit, please select the r f , c sc time constant in the range 1~2 s. 6. each capacitors should be mounte d as close to the pins as possible. 7. relays are used in almost every systems of electrical equipment in home appliances . in these cases, there should be suffic ient distance between the mcu and the relays. 8. internal ntc thermistor can be used for monitoring the case temperature and protecting the device from th e over-heating ope ration. please select an appropriate resistor rth according to the application. for example, use r th = 4.7 k that will make th e voltage across r th to be 2.5 v at 85c of the case temperature. 9. please use an appropriate shunt resistor r sh to protect the intenal igbt from the over-current operation. 10. its recommended that anti-parallel diode should be connected with igbt. mcu / controller +5 v +15 v +5 v csc vfo in com vcc out v th r th c sc v fo in com v p n ntc thermistor l p r s n v ac c sc r f current-sensing v dc r fo r r r sh cc r th
?2012 fairchild semiconductor corporation 11 www.fairchildsemi.com FBA42060 rev. c5 FBA42060 pfc spm? 45 series for single-phase boost pfc detailed package outline drawings package drawings are provided as a serv ice to customers considering fairchil d components. drawings may change in any manner without notice. please note the revision and/or data on the drawing and contact a fairchildsemiconductor representative to verify or obtain the most recent revision. package specificat ions do not expand the terms of fairchilds worldwide therm and conditions, specifically the the warranty therein, which covers fairchild products. always visit fairchild semiconduct ors online packaging area for the most recent package drawings: http://www.fairchildsemi.com/dwg/mo/mod23aa.pdf
?2012 fairchild semiconductor corporation 12 www.fairchildsemi.com FBA42060 rev. c5 FBA42060 pfc spm? 45 series for single-phase boost pfc
www. onsemi.com 1 on semiconductor and are trademarks of semiconductor components industries, llc dba on semiconductor or its subsidiaries i n the united states and/or other countries. on semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property . a listing of on semiconductors product/patent coverage may be accessed at www.onsemi.com/site/pdf/patent ? marking.pdf . on semiconductor reserves the right to make changes without further notice to any products herein. on semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does on semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. buyer is responsible for its products and applications using on semiconductor products, including compliance with all laws, reg ulations and safety requirements or standards, regardless of any support or applications information provided by on semiconductor. typical parameters which may be provided in on semiconductor data sheets and/or specifications can and do vary in dif ferent applications and actual performance may vary over time. all operating parameters, including typic als must be validated for each customer application by customers technical experts. on semiconductor does not convey any license under its patent rights nor the right s of others. on semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any fda class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. should buyer purchase or use on semicondu ctor products for any such unintended or unauthorized application, buyer shall indemnify and hold on semiconductor and its officers, employees, subsidiaries, affiliates, and distrib utors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that on semiconductor was negligent regarding the design or manufacture of the part. on semiconductor is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. publication ordering information n. american technical support : 800 ? 282 ? 9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81 ? 3 ? 5817 ? 1050 www.onsemi.com literature fulfillment : literature distribution center for on semiconductor 19521 e. 32nd pkwy, aurora, colorado 80011 usa phone : 303 ? 675 ? 2175 or 800 ? 344 ? 3860 toll free usa/canada fax : 303 ? 675 ? 2176 or 800 ? 344 ? 3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your localsales representative ? semiconductor components industries, llc

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